TFT array substrate, method for manufacturing the same, and liquid crystal display having the same

ABSTRACT

The present invention discloses a thin film transistor array substrate, a method for manufacturing the array substrate, and a liquid crystal display. The present invention further discloses a liquid crystal display having a reflective area and a transmissive area, which the image quality can be enhanced with. The present invention also discloses a liquid crystal display that has a liquid crystal layer whose thickness is depends on position.

CROSS-REFERENCE RELATED TO APPLICATIONS

This application relies for priority upon Korean Patent Application No.2004-7636 filed on Feb. 5, 2004, the contents of which are hereinincorporated by reference in its entirety.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to a thin film transistor (TFT) arraysubstrate, a method for manufacturing the same and a liquid crystaldisplay device having the TFT array substrate. More particularly, thepresent invention relates to a TFT array substrate forming a display andcapable of enhancing the display quality, a method for manufacturing thesame, and a liquid crystal display device having the TFT arraysubstrate.

2. Description of the Related Art

Generally, a reflective type liquid crystal display device uses anambient light to display an image. Therefore, in a dark place, thereflective type liquid crystal display device may not display an imageclearly.

However, a transmissive type liquid crystal display device uses a lightgenerated from a backlight assembly. Therefore, the transmissive typeliquid crystal display device displays an image clearly regardless ofambient brightness. However, the transmissive type liquid crystaldisplay consumes much energy to drive the backlight assembly. Therefore,the transmissive type liquid crystal display is inadequate for aportable display device.

A transmissive and reflective type liquid crystal display has the meritsof the reflective type and transmissive type liquid crystal display.

FIG. 1 is a cross-sectional view of a conventional transmissive andreflective type liquid crystal display.

Referring to FIG. 1, a conventional transmissive and reflective typeliquid crystal display includes a TFT array substrate 10, a color filtersubstrate 20, a liquid crystal layer 30, an upper quarter wave plate 40,an upper polarizer 50, a lower quarter wave plate 60 and a lowerpolarizer 70. The TFT array substrate 10 includes a reflective layer 19having a reflective region and transmissive window 19 a. The colorfilter substrate 20 faces the TFT array substrate 10. The liquid crystallayer 30 is interposed between the TFT array substrate 10 and the colorfilter substrate 20. The upper quarter wave plate 40 and the upperpolarizer 50 are disposed over the color filter substrate 20 insequence, and the lower quarter wave plate 60 and the lower polarizer 70are disposed below the TFT array substrate 10 in sequence.

FIGS. 2A and 2B are schematic views showing an operational principle ofthe conventional transmissive and reflective type liquid crystal displayof FIG. 1. FIG. 2A corresponds to a reflective mode operation, and FIG.2B corresponds to a transmissive mode operation. Especially, theconventional transmissive and reflective type liquid crystal displaycorresponds to a normally white mode liquid crystal display that shows awhite color, when no electric fields are applied to a liquid crystallayer.

Referring to FIG. 2A, during the reflective mode operation, an externallight passes through the upper polarizer 50 to form a linearly polarizedlight. Then, the linearly polarized light passes through the upperquarter wave plate 40 to form a circularly polarized light. Thecircularly polarized light may be right-handed or left-handed.

The circularly polarized light passes through the liquid crystal layer30. When electric field is not applied to the liquid crystal (LC) layer30, the liquid crystal molecules are twisted. In this case, the phase ofthe circularly polarized light is changed by λ/4 to form a linearlypolarized light after the light passes through the LC layer. Thelinearly polarized light is reflected on the reflective layer 19 andadvances the liquid crystal layer 30 again. Then, the phase of thecircularly polarized light is changed by λ/4 to form a circularlypolarized light again. The circularly polarized light passes through theupper quarter wave plate 40 again to form a linearly polarized light.Then, the linearly polarized light passes through the upper polarizer 50to display a white color.

However, when electric field is applied to the liquid crystal layer 30,the circularly polarized light coming from the upper quarter wave plate40 passes through the liquid crystal layer 30 without phase changes, andthe light is reflected on the reflective layer 19. After that, the lightadvances toward the upper quarter wave plate 40 again to pass throughthe upper quarter wave plate 40. Then, the phase is changed by λ/4 toform a linearly polarized light of which plane of vibration isperpendicular to the upper polarizer 50. The linearly polarized lightdoes not pass through the upper polarizer 50 to display a black color.

Referring to FIG. 2B, during the transmissive mode operation, a lightgenerated from a backlight assembly passes through the lower polarizer70 to form a linearly polarized light. Then, the linearly polarizedlight passes through the lower quarter wave plate 60 to form acircularly polarized light. The circularly polarized light passesthrough the liquid crystal layer 30. When electric field is not appliedto the liquid crystal (LC) layer 30, the liquid crystal molecules aretwisted. In this case, the phase of the circularly polarized light ischanged by λ/4 to form a linearly polarized light after the light passesthrough the LC layer. The linearly polarized light passes through theupper quarter wave plate 40 to form a circularly polarized light. Then,the circularly polarized light passes through the upper polarizer 50 todisplay a white color.

However, when electric fields are applied to the liquid crystal layer30, the circularly polarized light come from the lower quarter waveplate 60 passes through the liquid crystal layer 30 via the transmissiveelectrode 18. Then, the circularly polarized light passes through theupper quarter wave plate 40 to form a linearly polarized light of whichvibration plane is perpendicular to the upper polarizer 50. The linearlypolarized light does not pass through the upper polarizer 50 to displaya black color.

SUMMARY OF THE INVENTION

The present invention provides an array substrate capable of enhancing adisplay quality, a method of manufacturing the array substrate, and aliquid crystal display having the array substrate.

To realize abovementioned devices, a gate line is formed on a firstglass substrate. The gate line may have a protrusion to make a gateelectrode. A gate insulation layer is formed on the gate line. Asemiconductor layer is formed on the gate line and on the gateinsulation layer to form an active region. An ohmic contact layer isformed on the active region. A data line is formed on the gateinsulation layer. The data line crosses the gate line. The data line maybe formed on the ohmic contact layer. The data line may have aprotrusion to make a source electrode. A drain electrode is formed onthe ohmic contact layer. The gate electrode, the drain electrode, thesource electrode, and the active region form a thin film transistor(TFT). A passivation layer is formed on the active region, on the sourceelectrode, and on the drain electrode. A portion of the passivationlayer on the drain electrode is removed to make a contact hole. Aportion of the passivation layer in a pixel region is removed to form atransmissive pattern. A transparent electrode is formed in the pixelregion. The transparent electrode is coupled to the drain electrodethrough the contact hole. A reflection layer is formed on thetransparent electrode. The reflection layer may be formed between theelectrode and the passivation layer. A light shielding pattern is formedon a second glass substrate. The light shielding pattern may be formedon the first glass substrate. A color filter pattern is formed on thesecond glass substrate. A common electrode is formed on the color filterpattern. A spacer is formed on the common electrode. The first glasssubstrate and the second glass substrate is attached each other. Aliquid crystal (LC) layer is injected between the first substrate andthe second substrate. The LC layer may have a twisted nematic (TN) modealignment or an electrically compensated birefringence (ECB) modealignment. The rubbing direction on the first substrate and on thesecond substrate of the ECB mode may be anti-parallel, so that the LCmolecules are aligned parallel each other. A back light unit may beattached on the first substrate. A phase retardation optical film may beattached on the first substrate. Another phase retardation X s opticalfilm may be attached on the second substrate. A pair of polarizers isattached on the outside of the assembly of the first substrate and thesecond substrate. The spacer opposes the region that the data linecrosses the gate line. Sides of the transmissive window aresubstantially parallel with sides of the pixel area. The transmissivepattern may have substantially rectangular shape. The transmissivepattern may have a recession in a corner of the rectangular shape. Thespacer may oppose the corner. The recession may be curved, linear orhaving a step shape. At lease one side of the transmissive pattern isoverlapped with a opaque pattern like the light shielding pattern, thegate line, the data line, etc. The first substrate may have an alignmentlayer that is formed on the electrode layer or on the reflection layer.The alignment layer may be rubbed with a rubbing cloth. When one or twosides of the substantially rectangular transmissive pattern overlapopaque layers, the sides are outgoing sides of the rubbing. The outgoingsides of the rubbing are the sides that a rubbing cloth goes to theoutside from the inside of the substantially rectangular transmissivepattern in the rubbing process. An incoming side of the rubbing is thesides that a rubbing cloth comes into the substantially rectangulartransmissive pattern from the outsides in the rubbing process.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a cross-sectional view showing a conventional transmissive andreflective type liquid crystal display.

FIGS. 2A and 2B are schematic views showing an operational principle ofthe conventional transmissive and reflective type liquid crystal displayof FIG. 1.

FIG. 3 is a plan view showing a multiple cell gap transmissive andreflective type liquid crystal display.

FIG. 4 is a cross-sectional view taken along a line A-A′ of FIG. 3.

FIGS. 5A and 5B are schematic plan views of a multiple cell gaptransmissive and reflective type liquid crystal display, which shows areason of an afterimage by light leakage.

FIG. 6 is a cross-sectional view taken along a line B-B′ of FIG. 3,which shows an arrangement of liquid crystal molecules of 20 ms after avoltage is applied.

FIG. 7 is a cross-sectional view taken along a line B-B′ of FIG. 3,which shows an arrangement of liquid crystal molecules of 200 ms after avoltage is applied.

FIGS. 8A, 8B, and 8C are cross-sectional views showing first, second andthird comparative examples of a multiple cell gap transmissive andreflective type liquid crystal display.

FIG. 9 is a plan view showing a multiple cell gap transmissive andreflective type liquid crystal display according to an exemplaryembodiment of the present invention.

FIGS. 10A, 10B, 10C, 10D, and 10E are plan views showing a process formanufacturing a TFT array substrate of FIG. 9.

FIG. 11 is a plan view showing a multiple cell gap transmissive andreflective type liquid crystal display according to another exemplaryembodiment of the present invention.

DESCRIPTION OF PREFERRED EMBODIMENTS

Hereinafter the preferred embodiments of the present invention will bedescribed in detail with reference to the accompanied drawings.

FIG. 3 displays a pixel of a TFT array substrate for a transmissive andreflective type liquid crystal display having top ITO structure.

Referring to FIG. 3, a TFT array substrate includes a switching deviceTFT, a transparent electrode 150 and a reflective layer 160. Theswitching device TFT is formed in a region that is defined by a gateline 109 extended in a horizontal direction, and a source line 119extended in the vertical direction.

The switching device TFT includes a gate electrode 110 that is protrudedfrom the gate line 109, a source electrode 120 that is protruded fromthe source line 119, and a drain electrode 130 that is spaced apart fromthe source electrode 120. The transparent electrode 150 is electricallyconnected to the drain electrode 130. The reflective layer 160 includesa reflective region that reflects an external light, and a transmissiveregion (or transmissive window) that transmits a light generated from abacklight assembly. The reflective layer 160 includes a plurality ofrecess and grooves.

Referring to FIG. 4, a transmissive and reflective type liquid crystaldisplay includes a TFT array substrate 100, a color filter substrate 200and a liquid crystal layer 300 interposed between the TFT arraysubstrate 100 and the color filter substrate 200.

The TFT array substrate 100 includes a first transparent substrate 105,a gate electrode 110, a gate insulation layer 112, a semiconductor layer114, an ohmic contact layer 116, a drain electrode 130, a sourceelectrode 120 and an organic insulation layer 140. A switching TFTcomprises the gate electrode 110, the source electrode 120, the drainelectrode 130, the semiconductor layer 114 and the ohmic contact layer116. The gate electrode 110 is formed on the transparent substrate 105.The gate insulation layer 112 is formed on the transparent substrate105, such that the gate insulation layer 112 covers the gate electrode110. The organic insulation layer 140 includes a plurality of recessesand grooves to enhance a reflectivity.

The TFT array substrate 100 further includes a transparent electrode150, a protection layer 152 and a reflective layer 160. A portion of theorganic insulation layer 140 is opened to form a first contact hole 141.The transparent electrode 150 is electrically connected to the drainelectrode 130 via the first contact hole 141. The protection layer 152is formed on the transparent electrode 150, and the reflective layer 160is formed on the protection layer 152. Hereinafter, a region where thereflective layer 160 is formed is referred to as a reflective region,and a region where the reflective layer 160 is not formed is referred toas a transmissive window (or transmissive region) 145.

The transparent electrode 150 comprises an optically transparent andelectrically conductive material, for example, such as indium tin oxide(ITO), indium zinc oxide (IZO), etc. The TFT array substrate 100 mayfurther includes a capacitor wiring (not shown) that is spaced apartfrom the switching device TFT, and the capacitor wiring is disposed,such that the capacitor wiring overlaps with the transparent electrodeto form a storage capacitor Cst.

The color filter substrate 200 includes a second transparent substrate205, a black matrix layer (not shown), a color filter 210, and a surfaceprotection layer (not shown). The black matrix (not shown) defines R.G.Bpixel regions. The surface protection layer (not shown) protects theblack matrix (not shown) and the color filter 210. Instead of formingthe black matrix, neighboring color filters may overlap to operate asthe black matrix. A common electrode (not shown) may be formed on thesurface protection layer.

The liquid crystal layer 300 is interposed between the TFT arraysubstrate 100 and the color filter substrate 200, such that the liquidcrystal layer 300 has different thickness in accordance with a region.The liquid crystal layer 300 transmits an ambient light or a lightgenerated from a backlight assembly in accordance with a voltage appliedto the transparent electrode 150 and the common electrode.

FIGS. 5A and 5B are schematic plan views of a multiple cell gaptransmissive and reflective type liquid crystal display, which shows areason of an afterimage by light leakage. In FIGS. 5A and 5B, ‘CNT’represents a contact hole formed on a drain electrode of a switchingdevice.

Referring to FIG. 5A, when an alignment film is rubbed in a 10 o'clockdirection, an afterimage caused by light leakage is shown at a region ofH1 and V1 which are outgoing sides of rubbing from the transmissivewindow.

Referring to FIG.5B, when an alignment film is rubbed in a 10 o'clockdirection, a light leakage is shown at a region of H1, H2, V1 and V2,which are a boundary of transmissive window.

As shown in FIG. 6, when a voltage is applied, liquid crystal moleculesof a reflective region and a center portion of a transmissive window arevertically aligned within 20 ms. However, liquid crystal molecules ofthe right edge and the left edge of the transmissive window are notvertically aligned, so that light leaks as indicated by X11 and Y11. X11is much smaller than Y11. Therefore covering Y11 with an opaque patternmay enough to improve the image quality. You may need to cover X11 alsowith an opaque pattern to improve the image quality.

In 200 ms after the voltage is applied the light leakage Y22 and X21 issmaller than X11 as shown in FIG. 7 but that may still degrade the imagequality.

That is, an afterimage is remained at an early stage of a present framedue to a previous frame. Further, a light leakage happens successivelyat a next frame.

To remove the afterimage by light leakage, the transmissive window isformed on an end of the pixel area to shield some of the window edgesare covered by an opaque pattern such as the gate line, the data line,the light shielding pattern, etc.

FIG. 8A shows an example of a multi cell gap structure. The spacer 230on a color filter substrate opposes to an organic insulation layer 144that is flat. FIGS. 8B and 8C show examples of a multi cell gapstructure. The spacers oppose to a boundary of the transmissive windowand the reflective region. FIG. 8A is an easier example than FIGS. 8Band 8C to control the cell gap because the opposing surface of spacer tothe organic insulation layer does not change by variation of alignmentbetween the CF substrate and the TFT substrate.

Referring to FIG. 9, a TFT array substrate according to an exemplaryembodiment of the present invention includes gate lines 409, sourcelines 419, a switching device TFT, a transparent electrode 450 and areflective layer 445 having a reflective region and a transmissivewindow 460.

The gate lines 409 formed on a substrate are extended in a horizontaldirection, and arranged in a vertical direction. The source lines 419are extended in the vertical direction and arranged in the horizontaldirection.

The switching device TFT is formed in a region defined by neighboringgate lines 409 and neighboring source lines 419. The switching deviceTFT includes a gate electrode 410, a source electrode 420 and a drainelectrode 430. The gate electrode 410 is protruded from the gate line409, and the source electrode 420 is protruded from the source line 419.The drain electrode 430 is spaced apart from the source electrode 420.

The transparent electrode 450 is formed in the region defined byneighboring gate lines 409 and neighboring source lines 419. Thetransparent electrode 450 is electrically connected to the drainelectrode 430 via a contact hole 441.

The reflective layer 460 is formed on the transparent electrode 450, andthe reflective layer 460 includes a reflective region for reflecting anambient light. A transmissive window 445 for transmitting a lightgenerated from a backlight assembly is formed in a pixel region. Aportion of the reflective layer 460 is protruded toward the transmissivewindow 445. The reflective layer is electrically coupled to thetransparent electrode 450.

The transmissive window 445 has a polygonal shape not a rectangularshape. The sides of the transmissive window 445 may be substantiallyparallel with sides of the pixel region. The reflective region mayextend toward an edge of the transmissive window. The transmissivewindow may be recessed in a corner of it.

Therefore, the spacer is disposed on a region ‘A’, so that the spacer isfully supported by the other substrate to control the cell gap easily.

The reflective layer 460 defines a reflective region. The reflectivelayer 460 is extended toward the transmissive window 445 so that thetransmissive window may have a recession. The position of the recessionmay depend on the rubbing direction. For example, when the rubbingdirection corresponds to a ten o'clock direction, an edge of thereflective region, which neighbors lower and right sides of thetransmissive window 445, is extended toward the transmissive window 445from the ten o'clock direction.

Now shown in FIG. 9, when a TFT array substrate employs a separatewiring method, a lower metal that is formed simultaneously with the gatelines 409 and an upper metal that is formed simultaneously with thesource lines 419 form a storage capacitor Cst. The storage capacitor Cstis electrically connected to the transparent electrode 150 via a contacthole, so that the storage capacitor Cst is charged by electric chargesprovided from the drain electrode. The storage capacitor Cst isdischarged to maintain a voltage, so that a displayed image ismaintained.

Hereinafter a method for manufacturing a TFT array substrate will bedescribed. Referring to FIG. 10A, a metal layer is formed on a substrate405. The metal layer comprises at least one from the group consisting oftantalum (Ta), titanium (Ti), molybdenum (Mo), aluminum (Al), chromium(Cr), cupper (Cu), and tungsten (W). The substrate 405 may be made ofglass or ceramic. Then, the metal layer is patterned to form gate lines409 and a gate electrode 410 protruded from the gate lines 409. The gatelines 409 are extended in a horizontal direction, and arranged in avertical direction. A storage line (not shown) may further be formed ina process of forming the gate lines 409.

Successively, silicon nitride layer is formed on the substrate 405 andon the gate electrode 410 to form a gate insulation layer. For example,the silicon nitride layer may be formed via chemical vapor deposition(CVD) method. An amorphous silicon layer and n+ amorphous silicon layeris formed on the gate insulation layer, and patterned to form asemiconductor layer and an ohmic contact layer, which may define anactive layer 412.

Referring to FIG. 10B, a metal layer is formed on the ohmic contactlayer and on the gate insulation layer. The metal layer comprises atleast one from the group consisting of tantalum (Ta), titanium (Ti),molybdenum (Mo), aluminum (Al), chromium (Cr), cupper (Cu), and tungsten(W). The metal layer is patterned to form source lines 419, a sourceelectrode 420 protruded from the source lines 419, and a drain electrodethat is spaced apart from the source electrode 420. The gate electrode410, the active layer 412, the source electrode 420 and the drainelectrode 430 form a thin film transistor.

Referring to FIG. 10C, an organic insulation layer 440 is formed on theresult of FIG. 10B. The organic insulation layer may be formed by a spincoating method. A portion of the organic insulation layer 440 is removedto form a transmissive window 445 and a contact hole 441.

A portion of the organic insulation layer may be removed to make atransmissive window pattern 445, such that a portion of the data lines419 and a portion of the gate lines 409 overlap the transmissive windowpattern. A corner of the transmissive window 445 is recessed. Therefore,a spacer may be supported fully by the organic insulation layer 440. Asurface of the organic insulation layer 440 may undergo an embossingprocess in order to enhance reflection quality of a reflective layerthat is to be formed on the organic insulation layer 440. Preferably,the embossing patterns have substantially same depth.

In FIG. 10C, a boundary of the left upper side of the transmissivewindow 445 is recessed because the rubbing direction is ten o'clock. Incase that a rubbing direction corresponds to a two o'clock direction,the right upper side boundary of the transmissive window 445 will berecessed.

Referring to FIG. 10D, an indium tin oxide (ITO) layer 442 is formed andpatterned to form a transparent electrode. The transparent electrode iselectrically connected to the drain electrode 430 via the connectionhole 441. The indium tin oxide layer 442 may be deposited entirely andpatterned to remain only at a pixel region, and the indium tin oxidelayer 442 may be deposited only on the pixel region.

Referring to FIG. 10E, a reflective layer 460 is formed in the pixelregion defined by neighboring gate lines 409 and neighboring sourcelines 419. The reflective layer 460 is embossed also to form a recession462 and a groove 464, because the reflective layer 460 is formed on theorganic insulation layer having embossing patterns. The reflective layer460 is formed in a reflective region, and a portion of the reflectivelayer 460, which is adjacent to the transmissive window, may extendtoward the transmissive window.

FIG. 11 is a plan view showing a multiple cell gap transmissive andreflective type liquid crystal display according to another exemplaryembodiment of the present invention. Especially, the multiple cell gaptransmissive and reflective type liquid crystal display corresponds to atop ITO structure. The liquid crystal display of the present embodimentis same as above embodiment except for a shape of a transmissive window.Thus, the same reference numerals will be used to refer to the same orsimilar parts as described in above embodiment and any furtherexplanation will be omitted.

Referring to FIG. 11, a TFT array substrate according to anotherexemplary embodiment of the present invention includes gate lines 409,source lines 419, a switching device TFT, a transparent electrode 450and a reflective layer 560 having a reflective region and a transmissivewindow 545.

The transmissive window 545 has an edge rounded inwardly. That is, thereflective layer 560 protrudes inward to secure a space B for a spacer.Therefore, the spacer does not overlap the transmissive window 545.

The reflective layer 560 is formed in a reflective region, extendedtoward the transmissive window 545, and electrically connected to atransparent electrode 450. In FIG. 11, when the rubbing direction iscorresponds to ten o'clock direction, an edge of upper left side of thetransmissive window 445 is recessed toward the transmissive window 445.

Hereinbefore, although a TFT array substrate is explained only, a liquidcrystal display employing the TFT array substrate is self-evident.Therefore, an explanation of the liquid crystal display employing theTFT array substrate will be omitted.

According to the present invention, a portion of a transmissive windowoverlaps with an opaque pattern. Therefore, an afterimage caused by alight leakage is improved. Further, a spacer is supported securely, sothat a cell gap is controlled easily.

Having described the exemplary embodiments of the present invention andits advantages, it is noted that various changes, substitutions andalterations can be made herein without departing from the spirit andscope of the invention as defined by appended claims.

1. A thin film transistor array substrate, comprising: a transparentsubstrate including a pixel area that has a transmissive window, thetransmissive window having a recession on one corner of the transmissivewindow, at least one side of the transmissive window overlapped with anopaque pattern that is on the transparent substrate; a thin filmtransistor formed in the pixel area; a transparent electrode beingelectrically connected to the thin film transistor; and a reflectivelayer formed in a part of the pixel area to define the transmissivewindow.
 2. The thin film transistor of claim 1, wherein sides of thetransmissive window are substantially parallel with sides of the pixelarea.
 3. The thin film transistor of claim 1, wherein the recession hasa curved shape or a linear shape.
 4. The thin film transistor of claim3, wherein the recession has a round shape, a triangular shape or astepwise shape.
 5. The thin film transistor of claim 1, wherein thepixel area is defined by a pair of adjacent gate lines and a pair ofadjacent data lines, and the opaque pattern is a gate line, a data line,a light shielding pattern or a storage electrode.
 6. The thin filmtransistor of claim 1, wherein the transparent electrode overlaps thereflective layer and the transmissive window.
 7. The thin filmtransistor of claim 1, further comprising an organic insulation layerformed in the reflective layer.
 8. A thin film transistor arraysubstrate, comprising: a transparent substrate including a pixel areathat has a transmissive window, one corner of the transmissive windowbeing partially cut off, at least one side of the transmissive windowoverlapped with an opaque pattern that is on the transparent substrate;a thin film transistor formed in the pixel area; a transparent electrodebeing electrically connected to the thin film transistor; and areflective layer formed in a part of the pixel area to define thetransmissive window.
 9. A method for manufacturing a thin filmtransistor array substrate, comprising: forming a gate line and a gateelectrode on a glass substrate; forming a gate insulation layer on thegate line and on the gate electrode; forming a semiconductor patternelectrically coupled to the gate electrode; forming a data line, asource electrode and a drain electrode on the semiconductor pattern;forming a passivation layer on the semiconductor pattern; and forming atransmissive pattern by removing a portion of the passivation layer, onecorner of the transmissive pattern having a recession, at least one sideof the transmissive window overlapped with the gate line, the data lineor a light shielding pattern.
 10. The method of claim 9, wherein sidesof the transmissive pattern may be substantially parallel with the gateand data lines.
 11. The method of claim 9, further comprising: formingan embossing shape on the passivation layer; and forming a reflectionlayer on the passivation layer.
 12. The method of claim 9, wherein therecession is a round shape, a triangular shape, or a stepwise shape. 13.The method of claim 9, further comprising: forming a transparentelectrode on the passivation layer; forming an alignment layer on thetransparent electrode; rubbing the alignment layer with a cloth, whereinthe at least one side of the transmissive pattern is recessed, and therubbing is outgoing on the recessed side of the transmissive pattern.14. A liquid crystal display, comprising: an upper substrate; a lowersubstrate comprising, a pixel area defined by a pair of adjacent gatelines and a pair of adjacent data lines, a thin film transistor formedin the pixel area, a transparent electrode electrically coupled to thethin film transistor, the pixel area having a transmissive window and areflective area defining the transmissive window, the transmissivewindow having a recession on one corner of the transmissive window, aportion of the transmissive window overlapped with an opaque pattern;and a liquid crystal layer injected between the upper substrate and thelower substrate.
 15. The liquid crystal display of claim 14, wherein theopaque pattern is a gate line, a data line, a storage electrode or alight shielding pattern.
 16. The liquid crystal display of claim 15,wherein the light shielding pattern is a black matrix (BM).
 17. Theliquid crystal display of claim 14, wherein a thickness of the liquidcrystal (LC) layer in the reflective area and a thickness of the liquidcrystal layer in the transmissive window area are different from eachother.
 18. The liquid crystal display of claim 14, wherein the portionof the transmissive window overlapped with the opaque pattern is anoutgoing edge of the transmissive window with respect to a rubbingdirection.
 19. The liquid crystal display of claim 14, wherein sides ofthe transmissive window may be substantially parallel with sizes of thepixel area.
 20. The liquid crystal display of claim 19, wherein therecession has round shape, a rectilinear shape or a stepwise shape.